Click here for PDF version

Curriculum Vitae

Sohrab Ismail-Beigi
Department of Applied Physics
Yale University
P.O. Box 208284
New Haven, CT 06520
phone: (203) 432-2107
fax: (203) 432-4283
E-mail:
Web: http://volga.eng.yale.edu

Citizenship: USA

ACADEMICS

• A.B. in Physics, Harvard University, Cambridge, Massachusetts. 1989-1993.

• D.E.A. degree in Statistical Physics and Non-linear Phenomena, Ecole Normale Supérieure de Lyon, Lyon, France. 1993-1994.

• Ph.D. in Physics, MIT, Cambridge, Massachusetts. Student of Prof. Tomás Arias. 1994-2000.

• Postdoctoral Researcher in Physics, University of California at Berkeley and Lawrence Berkeley National Laboratory, Berkeley, California. Working in the group of Prof. Steven G. Louie. 2000-2003.

• Assistant Professor, Department of Applied Physics and Physics, Yale University, New Haven, Connecticut. 2003-2007

• Associate Professor, Department of Applied Physics and Physics, Yale University, New Haven, Connecticut. 2007-present

HONORS

• Winner of a Certificate of Distinction in Teaching Award (Spring 1992).

• Elected to Phi Beta Kappa as a Junior (Spring 1992).

• Graduated summa cum laude from Harvard University (highest academic ranking) (June 1993).

• Winner of the Hoopes Prize for excellence in undergraduate research in Physics:
  Thesis title: "Development of a New Interatomic Potential for silicon"; under the direction of Prof. Efthimios Kaxiras, Dept. of Physics (June 1993).

• Funding for Studies in Lyon provided by a Rotary International Ambassadorial Scholarship (September 1993-June 1994).

• Winner of best graduate student poster prize at the Workshop On New Methods In Electronic Structure (May 1999).

• Invited paper for special issue of Computer Physics Communications on ``Parallel Computing in Chemical Physics'' (August 1999).

• Invited talks/keynote presentations:
  • The Workshop on Recent Developments in Electronic Structure Methods, Atlanta, GA (May 2000).

  • The Workshop on Recent Developments in Electronic Structure Methods, Princeton, NJ (June 2001).

  • The 11$^{th}$ International Workshop on Computational Physics and Materials Science, Trieste, Italy (January 2003).

  • Theory and Modeling of Electronic Excitations in Nanoscience Conference, Acquafredda di Maratea, Italy (September 2004).

  • Workshop on Recent Developments in Electronic Structure Methods, Cornell, NY (June 2005).

  • The American Ceramics Society GOMD Spring meeting, Greenville, SC (May 2006).

  • Excitonic Processes in Condensed Matter Conference, Winston-Salem, NC (June 2006.)

  • Computational Methods for Nanoscale Systems, Hong Kong ( December 2006).

  • Time-Dependent Density-Functional Theory: Prospects and Applications, Benasque, Spain (September 2008).

  • 15th International Workshop on Oxide Electronics, Estes Park, Colorado (September 2008).

  • Molecular Foundry & NCEM Users' Workshop 2008, Berkeley (November 2008).

  • BECAT-IBM Workshop on High Performance Computational Science and Engineering, U. Conn. Storrs (December 2008).

  • The 2$^{nd}$ International Workshop: Nanoxide (oxide interfaces), Valbella Grisons, Switzerland (April 2009).

• IBM Faculty Award (2006).

PUBLICATIONS
 
Refereed Journals

• A. Antonelli, S. Ismail-Beigi, E. Kaxiras, and K. C. Pandey, ``Free energy of concerted-exchange mechanism for self-diffusion in silicon'', Physical Review B 53, 1310 (1996).

• S. Ismail-Beigi and T. A. Arias, ``Edge-driven transition in surface structure of nanoscale silicon'', Physical Review B 57, 11923 (1998).

• G. Csányi, S. Ismail-Beigi, and T. A. Arias, ``Paramagnetic Structure of the Soliton of the 30$^o$ Partial Dislocation in Silicon'', Physical Review Letters 80, 3984 (1998).

• S. Ismail-Beigi and T. A. Arias, ``Locality of the Density Matrix in Metals, Semiconductors and Insulators'', Physical Review Letters 82, 2127 (1999).

• S. Ismail-Beigi and T. A. Arias, ``Ab Initio Study of Screw Dislocations in Mo and Ta: A new picture of plasticity in bcc transition metals'', Physical Review Letters 84, 1499 (2000).

• S. Ismail-Beigi and T. A. Arias, ``New Algebraic Formulation of Density Functional Calculation'', invited paper for the special issue on ``Parallel Computing in Chemical Physics'', Computer Physics Communications 128, 1-45 (June 2000).

• S. Ismail-Beigi, P. Marrone, M. Reagan, T. A. Arias, and J. Tester, ``Ab Initio approach to continuum calculations of solvation energies in water'', (part of Ph.D. thesis, 2000). http://arxiv.org/abs/cond-mat/0007514

• G. Csányi, T. D. Engeness, S. Ismail-Beigi, and T. A. Arias, ``New Physics of the $30^o$ Partial Dislocation in Silicon'', Journal of Physics: Condensed Matter 12, 10029 (2000).

• S. Ismail-Beigi, E. K. Chang, S. G. Louie,``Coupling of Nonlocal Potentials to Electromagnetic Fields'', Physical Review Letters 87, 087402 (2001).

• D. E. Segall, S. Ismail-Beigi, and T. A. Arias, ``Elasticity of nanometer-sized objects'', Physical Review B 65, 214109 (2002).

• W. Luo, S. Ismail-Beigi, M. L. Cohen, and S. G. Louie, ``Quasiparticle band structure of ZnS and ZnSe'', Physical Reviews B 66, 195215 (2002).

• D. S. Segall, S. Ismail-Beigi, A. Strachan, W. A. Goddard III, and T. A., Arias, ``Ab Initio and Finite Temperature Molecular Dynamics Studies of Lattice Resistance in Tantalum'', Physical Reviews B 68, 014104 (2003).

• S. Ismail-Beigi and S. G. Louie, ``Excited-state Forces within the Ab Initio Bethe-Salpeter Formalism'', Physical Reviews Letters 90, 076401 (2003).

• C. D. Spataru, S. Ismail-Beigi, L. X. Benedict, and S. G. Louie, ``Excitonic Effects and Optical Spectra of Single-Walled Carbon Nanotubes'', Physical Reviews Letters 92, 077402 (2004).

• C. D. Spataru, S. Ismail-Beigi, L. X. Benedict, and S. G. Louie, ``Quasiparticle energies, excitonic effects, and optical absorption of small-diameter single-walled carbon nanotubes'', invited contribution to Applied Physics A 78, 1129 (2004).

• M. L. Tiago, S. Ismail-Beigi, and S. G. Louie, ``Effect of semicore orbitals on the electronic band gaps of Si, Ge, and GaAs within the GW approximation'', Physical Review B 69, 125212 (2004).

• M. L. Tiago, S. Ismail-Beigi, and S. G. Louie, ``Photoisomerization of azobenzene from first-principles constrained density-functional calculations'', Journal of Chemical Physics 122, 094311 (2005).

• S. Ismail-Beigi and S. G. Louie, ``Self-trapped Excitons in Silicon Dioxide: Mechanisms and Properties'', Physical Review Letters 95, 156401 (2005).

• C. D. Spataru, S. Ismail-Beigi, R. B. Capaz, and S. G. Louie, ``Theory and Ab Initio Calculation of Radiative Lifetime of Excitons in Semiconducting Carbon Nanotubes'', Physical Review Letters 95, 247402 (2005).

• E. B. Barros, R. B. Capaz, A. Jorio, G. G. Samsonidze, A. G. Souza Filho, S. Ismail-Beigi, C. D. Spataru, S. G. Louie, G. Dresselhaus, and M. S. Dresselhaus , ``Selection rules for one- and two-photon absorption by excitons in carbon nanotubes'', Physical Review B 73, 241406 (2006).

• R. B. Capaz, C. D. Spataru, S. Ismail-Beigi, and S. G. Louie, ``Diameter and chirality dependence of exciton properties in carbon nanotubes'', Physical Review B 74, 121401 (2006).

• S. Ismail-Beigi, ``Truncation of periodic image interactions for confined systems'', Physical Review B 73, 233103 (2006).

• H. Tang and S. Ismail-Beigi, ``Novel Precursors for Boron Nanotubes: The Competition of Two-Center and Three-Center Bonding in Boron Sheets'', Physical Review Letters 99, 115501 (2007).
  • Selected as an Editor's Suggestion in Physical Review Letters.
  • Highlighted in ``Search and Discovery'' of Physics Today 60 (November/issue 11), 20 (2007) (PDF)
  • Featured interview in PhysOrg.com (Sept. 27, 2007).

• R. B. Capaz, C. D. Spataru, S. Ismail-Beigi, and S. G. Louie, ``Excitons in carbon nanotubes: Diameter and chirality trends'', Physica Status Solidi (b) 11, 4016 (2007).

• A. Sitt, L. Kronik, S. Ismail-Beigi, and J. R. Chelikowsky, ``Excited-state forces within time-dependent density-functional theory: A frequency-domain approach'' Physical Review A 76, 054501 (2007).

• S. Ismail-Beigi, ``Electronic excitations in single-walled gallium nitride nanotubes from first principles: dark excitons and unconventional diameter dependences'', Physical Review B 77, 035306 (2008).

• J. W. Reiner, K. F. Garrity, F. J. Walker, S. Ismail-Beigi, and C. H. Ahn, ``Role of Strontium in Oxide Epitaxy on Silicon (001)'', Physical Review Letters 101, 105503 (2008).

• Y. Segal, J. W. Reiner, A. M. Kolpak, Z. Zhang, S. Ismail-Beigi, C. H. Ahn, and F. J. Walker, ``Atomic Structure of the Epitaxial BaO/Si(001) Interface'', Physical Review Letters 102, 116101 (2009).

• H. Chen, A. M. Kolpak, and S. Ismail-Beigi, ``Fundamental asymmetry in interfacial electronic reconstruction between insulating oxides: An ab initio study'', Physical Reivew B 79, 161402(R) (2009).

• K. Garrity and S. Ismail-Beigi, ``Phase diagram of Sr on Si(001): A first-principles study'', Physical Review B 80, 085306 (2009).
  • Selected as an Editor's Suggestion in Physical Review B.

• S. Ismail-Beigi, ``Optical signatures of point defects in n-type and p-type GaN'' (in preparation).

Conference proceedings and book chapters

• S. Ismail-Beigi, ``First principles calculation of optical and electronic properties with inclusion of exciton effects'', Physica Status Solidi (c) 3, 3365 (2006).

• Chapter 6 on electronic excitations in carbon nanotubes as part of the second edition by Springer of ``Carbon Nanotubes: Advanced Topics in the Synthesis, Structure, Properties and Applications'' with co-authors C. D. Spataru, R. B. Capaz, and S. G. Louie (2008).